Micro Photo Sensor

  • NPN open collector

  • 5-24VDC ±10%(ripple P-P : max. 10%) Supply Voltage

  • CE



ConnectionConnector type
Supply Voltage5-24VDC ±10%(ripple P-P : max. 10%)
Environment_Ambient illuminationFluorescent lamp: Max. 1000lx(received illumination)
Sensing distance5mm
Standard Sensing TargetOpaque
Sensing TypeThrough-beam type
Response frequency2kHz
Control outputNPN open collector
MaterialCase: PBT; Sensing part: PC
Protection structureP50 (IEC standard)
Shock15000 m/s² (approx. 1500G) in each X/ Y/ Z direction for 3 times
Environment_Ambient humidity35 to 85% RH. storage: 35 to 85% RH
Vibration1.5mm amplitude (max. acceleration 196m/s²) at frequency of 10 to 2000Hz in each X/ Y/ Z direction for 2 hours
Environment_Ambient humidity-20 to 55℃. storage : -25 to 85℃
Dielectric strength1000VAC 50/60Hz for 1 minute
Noise immunityThe square wave noise (pulse width: 1㎲) by the noise simulator ±240VDC
Insulation resistance≥20 MΩ (250 VDC megger)
Protection circuitReverse polarity protection circuit; output overcurrent (short-circuit) protection circuit
Residual voltageNPN: ≤1.2VDC; PNP: ≤ 1.2VDC
Load currentMax. 100mA
Load voltage≤30VDC
Current consumptionMax. 30mA
IndicatorOperation indicator (red LED)
Operation modeLight ON/Dark ON(set by control wire)
Peak emission wavelength940nm
Light sourceInfrared LED
Response timeLight ON: Max. 20㎲/Dark ON: Max. 100㎲
Hysteresis distance≤0.05mm
Min. sensing target≥Ø0.8mm×2mm

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