BS5-V2M-P
Micro Photo Sensor
In Stock
PNP open collector
5-24VDC ±10%(ripple P-P : max. 10%) Supply Voltage
CE
Model |
BS5-V2M-P |
---|---|
Connection | Connector type |
Supply Voltage | 5-24VDC ±10%(ripple P-P : max. 10%) |
Environment_Ambient illumination | Fluorescent lamp: Max. 1000lx(received illumination) |
Sensing distance | 5mm |
Standard Sensing Target | Opaque |
Sensing Type | Through-beam type |
Response frequency | 2kHz |
Control output | PNP open collector |
Material | Case: PBT; Sensing part: PC |
Protection structure | P50 (IEC standard) |
Certification | CE |
Shock | 15000 m/s² (approx. 1500G) in each X/ Y/ Z direction for 3 times |
Environment_Ambient humidity | 35 to 85% RH. storage: 35 to 85% RH |
Vibration | 1.5mm amplitude (max. acceleration 196m/s²) at frequency of 10 to 2000Hz in each X/ Y/ Z direction for 2 hours |
Environment_Ambient humidity | -20 to 55℃. storage : -25 to 85℃ |
Dielectric strength | 1000VAC 50/60Hz for 1 minute |
Noise immunity | The square wave noise (pulse width: 1㎲) by the noise simulator ±240VDC |
Insulation resistance | ≥20 MΩ (250 VDC megger) |
Protection circuit | Reverse polarity protection circuit; output overcurrent (short-circuit) protection circuit |
Residual voltage | NPN: ≤1.2VDC; PNP: ≤ 1.2VDC |
Load current | Max. 100mA |
Load voltage | ≤30VDC |
Current consumption | Max. 30mA |
Indicator | Operation indicator (red LED) |
Operation mode | Light ON/Dark ON(set by control wire) |
Peak emission wavelength | 940nm |
Light source | Infrared LED |
Response time | Light ON: Max. 20㎲/Dark ON: Max. 100㎲ |
Hysteresis distance | ≤0.05mm |
Min. sensing target | ≥Ø0.8mm×2mm |